Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams

Metal-Oxide-Semiconductor (MOS) capacitors fabricated on 4H silicon carbide (SiC) were irradiated with heavy ions at energies of up to 454 MeV. The currents observed through the gate oxide of the MOS capacitors were monitored under biased conditions during ion irradiation. Under ion irradiation, the dielectric breakdown was observed at lower electric fields compared to the case under non-irradiation condition. The value of the electric field, at which the dielectric breakdown was obtained, decreased with increasing linear energy transfer (LET) of the incident ions.