Selective area epitaxy of ultra-high density InGaN based quantum dots

Guangyu Liu,Hongping Zhao,Jing Zhang,Joohyung Park, L J Mawst,Nelson Tansu

IEEE Winter Topicals 2011（2011）

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摘要

Highly uniform InGaN quantum dots (QDs) were grown by metal-organic chemical vapor deposition utilizing self-assembled diblock copolymer nanopatterns. This approach resulted in ultra-high InGaN QD density of 8 × 1010 cm−2.

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关键词

polymer blends,mocvd,etching,nanophotonics,scanning electron microscopy,quantum dot,annealing,epitaxial growth,wide band gap semiconductors,dielectrics,hafnium,self assembly

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