Solar Cells prepared with Spray-ILGAR Indium Sulfide buffer layers on Cu(In,Ga)Se 2 Absorbers

Indium sulfide buffer layers deposited by the Spray-Ion Layer Gas Reaction (Spray-ILGAR) technique have recently been used with Cu(In,Ga)(S,Se) 2 absorbers giving cells with an efficiency equal to the cadmium sulfide references. In this paper we show the first results from cells prepared with Cu(In,Ga)Se 2 absorbers (sulfur free). These cells reach an efficiency of 13.1% which remains slightly below the efficiency of the cadmium sulfide reference. However, temperature dependant current-voltage measurements reveal that the activation energy of the dominant recombination mechanism remains unchanged from the cadmium sulfide buffered cells indicating that recombination remains within the space charge region.