Enhancement Of Effective Electromechanical Coupling Factor By Mass Loading In Layered Saw Device Structures

Gongbin Tang,Tao Han,Akihiko Teshigahara,Takao Iwaki,Ken-Ya Hashimoto

2015 JOINT CONFERENCE OF THE IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM & THE EUROPEAN FREQUENCY AND TIME FORUM (FCS)（2015）

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摘要

This paper describes drastic enhancement of K-e(2) by mass loading in layered SAW device structures such as the ScAlN film/Si substrate. It is shown that this phenomenon is obvious even when an amorphous SiO2 film is deposited on the top surface for temperature compensation. This enhancement is caused by SAW energy confinement to the top surface of the ScAlN layer where the IDT is placed. This K-e(2) enhancement is also found when other electrode and/or substrate materials are employed.

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关键词

ScAlN film,layered structure,effective electromechanical coupling factor,mass loading,SiO2 overlay

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