Extremely High Current Density over 1000 A/cm2operation in M-GaN LEDs on Bulk GaN Substrates with Low-Efficiency Droop
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE（2014）
关键词
InGaN,bulk GaN substrate,m-plane,light-emitting diode,output power,external quantum efficiency,radiation,texture
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