High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

Lateral Schottky barrier diodes (SBDs) on AlGaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmic contact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400V and low reverse leakage current below 20 nA are achieved by the device with a Schottky contact diameter of 100 mu m and a contact spacing of 40 mu m, yielding a high V-BR(2)/R-ON,R-sp value of 194 MW.cm(-2).