Design and optimization of ESD lateral NPN device in 14nm FinFET SOI CMOS technology

You Li,Rahul Mishra, Liyang Song,Robert J Gauthier

Electrical Overstress Electrostatic Discharge Symposium（2015）

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摘要

We present the development of ESD lateral NPN device in 14nm FinFET SOI CMOS technology using body-contact and floating-body approaches. The effects of key design factors including base length, base doping, body resistance on the triggering and ESD performance of LNPN device are investigated to achieve an optimized design.

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关键词

FinFET SOI CMOS technology,ESD lateral NPN device optimization,body-contact approach,triggering performance,body resistance,base doping,base length,floating-body approach,size 14 nm,Si

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