High-Performance Monolithically-Integrated E/D Mode Inaln/Aln/Gan Hemts For Mixed-Signal Applications

Monolithically-integrated E- and D-mode InAlN/AlN/GaN HEMTs for mixed-signal applications have been demonstrated. For devices with gate lengths of 144 nm, peak tranconductances of 0.92 S/mm and 0.84 S/mm have been obtained for E- and D-mode devices, respectively, while maximum drain currents of 1.84 A/mm and 1.9 A/mm have been measured for E- and D-mode devices. RF performance is also well-matched, with E-mode devices exhibiting f(t)'s of 94 GHz and f(max)'s of 176 GHz, while D-mode devices had f(t)'s of 94 GHz and f(max)'s of 174 GHz. Ring oscillators have been fabricated to demonstrate the technology.