Carrier Generation at Ferroelectric Phase Transitions Evidenced in Conductivity-Overshooting

By studying the change of the current through stoichiometric undoped BaTiO3 with time, we have examined whether the conductivity peaks of BaTiO3 single crystals near the bulk phase transitions are due to a real conduction of electrons or holes through the samples or the fake current due to ferroelectric domain motion. The difference ( Q) between integrated current at temperatures (388 K and 400 K) above and below TC exceeds 2PS. The observation that at 2057s is still evidently enhanced shows that this effect is due to real conduction. Because the charge released by the switching cannot exceed 2PS 35 C/cm2 at 388 K.