High Efficiency Green Leds Using Ii-Vi Color Converters
LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XIV(2010)
摘要
II-VI semiconductors can exhibit strong photoluminescence throughout the visible spectrum and are excellent candidates for filling the so-called "green gap". We report on the performance of green color-converted LEDs fabricated by bonding CdMgZnSe multiple quantum well structures to high-efficiency blue-emitting GaInN LEDs. A device efficacy of 181 lm/W at 537 nm (dominant) is measured under room temperature, 350 mA/mm(2) quasi-cw conditions, more than twice as efficient as typical commercial green LEDs today. The thermal roll-off is shown to be comparable to that of typical green GaInN LEDs. Finally, the implications of the availability of high-efficiency, narrow-band, green and yellow emitters in display applications will be discussed.
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关键词
II-VI semiconductor,CdMgZnSe,LED,phosphor,GaN,green
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