Growth and Fabrication of High Reverse Breakdown Heterojunction n-Gan: p-6H-Sic Diodes

Wide band gap semiconductors are attractive for developing high power switching devices because of their ability to operate at both higher temperatures as well as higher frequencies than conventional Si. In this paper we report on the growth and fabrication of GaN/SiC np heterojunction diodes by depositing Si doped n-GaN films by plasma-assisted molecular beam epitaxy directly on SiC without the use of GaN or AlN buffers. Careful ex-situ and in-situ preparation of the Si terminated 6H- SiC surface was necessary to produce high quality diodes. Vertical circular diodes were fabricated with sizes varying from 200 microns to 1mm in diameter. Mesas were formed by ICP etching of the MBE deposited n-GaN layer using Cl2. A Ti/Al/Ni/Au metal stack was employed as an n-ohmic contact to the GaN layer and an Al/Ti/Au metal stack was employed as a backside p-ohmic contact to the 6H- SiC layer. The diodes were characterized by I-V and C-V measurements. The 1 mm diameter diodes exhibited almost ideal behavior under forward bias with an ideality factor of 1.6, and a reverse saturation current of 10–19 A/cm2. Under reverse bias, these devices were driven up to 1000 V with a measured leakage current of 5×10–7 A. and a dynamic resistance varying from 1010 to 109 ohms with increasing reverse bias. The built-in potential in these n-p heterojunctions was determined from C-V measurements to be 2.25 V. From these values we determined that the heterojunction is of Type II with conduction and valence bands offsets calculated to be 0.65 and 1.1 eV respectively.