GaInP/GaAs HBTs: state of the art

S L Delage,H Blanck,S Cassette,D Floriot,E Chartier,M A Difortepoisson, E Watrin,P Bourne

international symposium on signals systems and electronics（1995）

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摘要

First, a review of the laboratories, which have studied the GaInP/GaAs HBT for electronic applications, is given. Then the peculiarities of this device are addressed compared to the more conventional GaAlAs/GaAs HBTs. Finally, a presentation of some recent Thomson-CSF X-band power results are presented and compared to the literature.

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关键词

photonic band gap,etching,radio frequency,shf,gallium arsenide,mocvd

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