Parameter Extraction in Quadratic Exponential Junction Model with Series Resistance using Global Lateral Fitting

A global lateral fitting procedure is proposed to extract the parameters of quadratic double exponential junction models in the presence of parasitic series resistance. Error analysis of the extracted parameters values within a large representative family of synthetic data indicate excellent match between the extracted values and a wide range of the original given model parameters. The procedure was also tested on real data to extract the model parameters of an experimental Silicon PIN diode measured at cryogenic temperature.