A 10 GHz cut-off frequency transistor based on epitaxial graphene nano ribbon

Nan Meng,J Ferrer Fernandez,D Vignaud,Gilles Dambrine,Henri Happy

European Microwave Integrated Circuits Conference - Proceedings（2010）

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摘要

High frequency characterization of epitaxial-grown graphene nano ribbon based field-effect transistor (GNRFET) was investigated. The few layers graphene were synthesized by thermal decomposition of Si-faced silicon carbide. The intrinsic current gain cut-off frequency of 10 GHz was obtained. A small signal equivalent circuit model of this device was proposed which open a potentiality to the modelling of GNR based HF electronics.

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关键词

graphene,field effect transistors,pyrolysis,epitaxial growth,transistors,cutoff frequency,thermal decomposition,logic gates,gain,high frequency,field effect transistor,equivalent circuit,equivalent circuits

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