Radiation Damage in Epitaxial CaF2 Films on Si Substrates by Ar+ Ion Implantation

Radiation damage in epitaxial CaF2 films on Si substrates produced by 150 keV Ar+ ion implantation has been investigated using Rutherford backscattering and channeling techniques. It has been found that CaF2 films are more stable than Si crystals for ion bombardment and are not amorphized at such a high dose as 6×1016 cm-2. Recovery of the damage by subsequent thermal annealing has also been investigated.