70nm NAND flash technology with 0.025 /spl mu/m/sup 2/ cell size for 4Gb flash memory

Yongsik Yim,Kwangshik Shin,Sunghoi Hur,Jaeduk Lee,Ihngee Balk,Soojin Chai,Eunyoung Choi,Mincheol Park,Dongseok Eun,Sungbok Lee,Sunpil Youn,Taejung Kim,Hansoo Kim,Kyucharn Park,Kinam Kim

international electron devices meeting（2003）

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摘要

A 4 Gb NAND flash memory with a 70 nm design rule is developed for mass storage applications. The cell size is 0.025 /spl mu/m/sup 2/, which is the smallest value ever reported. For the integration, an ArF lithography process along with resolution enhancing techniques was utilized, and poly-Si/W gate technology with an optimized re-oxidation process was implemented.

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关键词

photolithography,silicon,tungsten,oxidation

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