Influence of Graphene Interlayers on Electrode-Electrolyte Interfaces in Resistive Random Accesses Memory Cells

The behavior of the redox-based resistive switching memories is influenced by chemical interactions between the electrode and the solid electrolyte, as well as by local environment. The existence of different chemical potential gradients is resulting in nanobattery effect lowering the stability of the devices. In order to minimize these effects we introduce a graphene layer at the active electrode–solid electrolyte interface. We observe that graphene is acting as an effective diffusion barrier in the SiO 2 -based electrochemical metallization cells and acts catalytically on the electrochemical processes prior to resistive switching.