Photo Sensitivities In A 0.35 Mu M 18v Pdmos Technology

The I3T25 technology being developed at AMI Semiconductor, Inc. uses lateral extended-drain MOS transistors (DMOS) [1] in a 0.35 mu m base technology. These devices are very sensitive to the well and field implant critical dimensions (CDs) and the layer-to-layer alignment (overlay). This sensitivity is much greater than the standard CMOS devices. The photoresist used on the P-channel field implant (PFLD) mask has a strong dependence on reticle transmission (RT) and has caused variability in the P-channel DMOS performance.