Algan/Gan Field-Plate Fets For Microwave Power Applications

This paper describes the performance of AlGaN/GaN Field-Plate FETs and amplifiers for microwave power applications. Recessed-gate FETs with a single field-modulating plate (FP) and advanced dual field-modulating plates (FP's) FP are developed for high-voltage microwave power operation. The developed single FP-FETs exhibited a 230-W CW output power at 2 GHz and a 100-W CW output power at 5 GHz. The developed dual FP-FET provides higher gain, increased linearity and stability since the second FP effectively reduces feedback capacitance. Under a 2.15-GHz WCDMA modulation scheme, the dual-FP-FET achieved a-state-of-the-art combination of 160-W output power and a 17.5 dB linear gain. The developed amplifier using two device dice for W-CDMA base stations delivers a 370-W peak output power and the amplifier for other L/S band high power applications delivers a pulsed 750-W output power at 2.14 GHz.