The Dependence Of Optical And Electrical Properties Of Gan Nanowires On The Growth Temperature

The optical and electrical transport of GaN nanowires grown by metal catalyzed metal organic chemical vapor deposition was investigated as a function of substrate temperature during growth. As the growth temperature increased from 800 degrees C to 900 degrees C the electrical conduction mechanism changed from space charge limited to ohmic transport, the nanowire resistivity dropped from similar to 10(7) ohm-cm to similar to 10(-3) ohm-cm, and the band edge luminescence increased by more than two orders of magnitude. A strong correlation between the resistivity and the fraction of band edge luminescence for individual nanowires was observed.