Fabrication Of Ce : Yig Film For Electric And Magnetic Field Sensor By Pulsed-Laser Deposition And Laser-Induced Forward Transfer

Ce-doped yttrium iron garnet (Ce:YIG) thin films were deposited for the first time by pulsed-laser deposition (PLD) on gadolinium gallium garnet (GGG(111)) substrates. Well crystallized film was obtained at high substrate temperature (similar to 900 degreesC) and in low Ar gas pressure (similar to 50 mtorr). A Faraday rotation angle was wavelength dependent, and the largest value was 4.2 X 10(4) deg/cm at 420 nm. The control of the charge state of Ce ion is necessary for crystallization. The deposited Ce:YIG films were transferred by laser-induced forward transfer (LIFT) process to obtain a thick film.