Novel Test Structures For On-Chip Characterization Of Coupling Capacitance Variation By In- And Anti-Phase Crosstalk In Multi-Level Metallization

Novel test structure is proposed for on-chip evaluation of the crosstalk-induced variation of coupling capacitance in multi-fanout and global interconnect lines. Then, it is experimentally shown that the crosstalk-induced variation of coupling capacitance, Delta C-C can be larger than the static coupling capacitance, C-C for both multi-fanout and global interconnect using the novel on-chip test structures. HSPICE simulation is performed to confirm the experimental data.