BIPOLAR TRANSISTOR WITH RAISED EXTRINSIC SELF-ALIGNED BASE USING SELECTIVE EPITAXIAL GROWTH FOR BICMOS INTEGRATIONNatalie B Feilchenfeld,Bradley A Orner,Benjamin T Voegelimag(2012)引用 29|浏览10暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要