Accurate determination of the main parameters from V/sub t/(V/sub b/) curves of fully-depleted SOI devices

This paper describes a simple and accurate method to extract the main technological parameters: buried oxide thickness, silicon film thickness and doping level which are used to design fully-depleted SOI devices. Both enhancement-mode and accumulation-mode devices are measured for different silicon thicknesses from 200 to 500 /spl Aring/, the parameters are extracted from the variation of the front threshold voltage with the back gate bias using the corresponding analytical models.