Auger Effect Seen in the Porous Silicon Fast Luminescent Band
MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS-1998(2011)
摘要
Time resolved photoluminescence (PL) measurements are performed on oxidized and fresh porous silicon at room temperature. Comparing the evolution of the nanosecond time delayed PL in both cases, a new feature of the PL spectra is identified: the fast-red band, present as well in fresh or aged samples. The nonlinear excitation intensity dependence of this component is described by a simple model where, the Auger effect inside isolated silicon nanocrystallites plays the dominant role.
更多查看译文
关键词
silicon
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要