A New Method For Analysis Of Cycling-Induced Degradation Components In Split-Gate Flash Memory Cells

2013 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IRW)（2013）

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摘要

A new simple and fast method for separation of cycling-induced degradation components in split-gate SuperFlash (R) cell is proposed. The method is based on the effect of tunneling current stabilization during linearly ramped erase voltage.

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关键词

Flash memory, floating gate, electron tunneling, electron trapping, program-erase cycling endurance, memory reliability, oxide degradation

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