Method for manufacturing a semiconductor memory device e.g. as FeRAM store, requires semiconductor substrate, passivation zone and/or surface zone formed on it with CMOS structure Kroenke Matthias,Bruchhaus Rainer, Enders Gerhard,Hartner Walter,Mikolajick Thomas,Nagel Nicolas, Roehner Michaelmag(2003)引用 22|浏览1暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要