Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layerDaniel Francis,Felix Ejeckam,John Wasserbauer,Dubravko I Babicmag(2015)引用 24|浏览4暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要