Experimental Hardware Calibrated Compact Models for 50nm n-channel FinFETs

Jooyoung Song,Bo Yu,W Xiong,C H Hsu,C R Cleavelin,Mike Ma, P Patruno,Yuan Taur

2007 IEEE International SOI Conference（2007）

引用 9|浏览4

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摘要

An analytic potential DG model with quantum mechanical and short channel effects is calibrated to experimental n-channel FinFET data. All C-V and I-V curves from L=10 mum to 50 nm are in excellent agreement with a single mobility model. There is evidence suggesting higher than expected currents from very short fins possibly due to strain enhanced transport effects.

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关键词

n-channel FinFET,DG model,quantum mechanical effects,short channel effects,hardware-calibrated compact models,C-V curves,I-V curves,strain-enhanced transport effects,carrier mobility,size 10 mum to 50 nm

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