A 9-81/38-189 Ghz Dual-Band Switchable Dynamic Frequency Divider

2015 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS)(2015)

引用 5|浏览7
暂无评分
摘要
A 9-81/38-189 GHz dual-band divide-by-2 dynamic frequency divider is presented. The band switching is performed by switching a capacitance using PIN diodes. To the best of the authors' knowledge, this is the first band switching dynamic divider reported so far at such high frequencies. The divider is based on the regenerative frequency division principle followed by a buffer that can deliver -15.7dBm and -10dBm output power at 189GHz and 9GHz input frequency, respectively, which is sufficient to drive succeeding stages. The correct functionality of the divider over its entire operating frequency range is verified with lab measurements. The circuit is realized in a 130nm SiGe BiCMOS technology with f(T)=250 GHz.
更多
查看译文
关键词
BiCMOS technology,regenerative frequency division principle,first band switching dynamic divider,PIN diodes,divide-by-2 dynamic frequency divider,dual-band switchable dynamic frequency divider,frequency 9 GHz to 81 GHz,frequency 38 GHz to 189 GHz,frequency 250 GHz,size 130 nm,SiGe
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要