Effects of interface properties in SiC MOSFETs on reliability

Yasuki Mori,Digh Hisamoto,Naoki Tega,Michio Matsumura,Hiroyuki Yoshimoto,Akio Shima,Yasuhiro Shimamoto

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits（2015）

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摘要

Based on the experience with silicon (Si) devices, some characteristics of silicon carbide (SiC) devices are likely to be misunderstood. In this paper, studies on channel mobility, time dependent dielectric breakdown (TDDB), and negative bias temperature instability (NBTI) in 4H-SiC MOSFETs are reviewed. Through the discussions, it is indicated that SiC-based models, such as local band gap modulation, and models for the relationship between defect energy state and SiC band gap are effective to understand the above characteristics.

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关键词

reliability,SiC band gap,defect energy state,local band gap modulation,SiC-based models,4H-SiC MOSFET,NBTI,negative bias temperature instability,TDDB,time dependent dielectric breakdown,channel mobility,SiC devices,silicon carbide devices,silicon devices,SiC

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