Visible-Light Amorphous Silicon-Nitride Thin Film Light Emitting Diode

A visible-light Thin Film Light Emitting Diode (TFLED) having a-SiN:H as a luminescent active layer has been developed. The TFLED has a structure of glass substrate/ITO/p a-SiC:H/i a-SiN:H/n a-SiC:H/A1. The emission color could be changed from red to orange, yellow, green and white-blue by varying the optical energy gap of the i a-SiN:H layer in the TFLED. The brightness was in the order of 0.1-1 cd/m2. A series of systematic investigations on the basic properties of a-SiN:H films carrier injection and recombination mechanism in TFLEDs is described.