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Ultra-High Implant Activation Efficiency in GaN Using Novel High Temperature RTP System

Cao X. A.,Abernathy C. R.,Singh R. K.,Pearton S. J.,Fu M.,Sarvepalli V.,Sekhar J. A.,Zolper J. C.,Rieger D. J.,Han J.,Drummond T. J.,Shul R. J.,Wilson R. G.

MRS Online Proceedings Library（2011）

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Key words
AlGaN/GaN HEMTs,GaN,Metal Gate Transistors
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