Structural and Magnetic Characterization of MOCVD Grown GaMnN and GaFeN Nanostructures

The growth of Ga 1-x Mn x N and Ga1-xFexN nanostructures was carried out by MOCVD. Introduction of transition metals (TM) Mn and Fe in GaN nanostructures enhanced the nucleation of the nanostructures resulting in reduced lateral dimensions and increased nanostructure density. The Ga 1-x Mn x N nanostructures showed hysteresis behavior at 5K. Room temperature ferromagnetism was obtained in the Ga 1-x Fe x N nanostructures unlike its bulk counterpart. This paper presents the growth and magnetization study of Ga 1-x TM x N nanostructures. These structures could be used to enhance the efficiency of spintronic devices.