Highly Reliable And Mass-Productive Fram Embedded Smartcard Using Advanced Integration Technologies

Hj Joo,Yj Song,Hh Kim,Sk Kang,Jh Park,Ym Kang, Ey Kang, Sy Les,Hs Jeong,K Kim

2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS（2004）

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摘要

We developed FRAM embedded smartcard in which FRAM replace EEPROM and SRAM to improve the read/write cycle time and endurance of data memories in smartcard. Highly reliable sensing window for FRAM embedded smartcard was achieved by advanced integration technologies such as novel capacitor technology, multi-level encapsulating barrier layer (EBL) technology, and optimal inter-metallic dielectrics (IMD) technology.

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关键词

metallization,capacitors,cmos technology,ferroelectric materials,smartcard,hydrogen,mass production,nonvolatile memory,cycle time,eprom

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