Drift design impact on quasi-saturation & HCI for scalable N-LDMOS

Yun Shi,Natalie B Feilchenfeld, R I Phelps, Max Levy,Martin Knaipp,Rainer Minixhofer

2013 INTERNATIONAL CONFERENCE ON COMPUTER SCIENCES AND APPLICATIONS (CSA)（2011）

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摘要

In this paper, we discuss the scalable NLDMOS design in a 0.18 mu m HV-CMOS technology. The design impacts in quasi-saturation are compared between the 25V and 50V NLDMOS to demonstrate the implications in output and f(T) characteristics. The STI depth sensitivity in DC, ac and HCI characteristics is investigated. The results prove a very robust design, featuring <10% I-dlin shift over 10 year lifetime for +/-10% STI depth variations.

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关键词

integrated circuit design,shallow trench isolation,hot carriers,hot carrier injection,reliability,degradation,human computer interaction,sensitivity,cmos integrated circuits

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