Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process
2007 IEEE Symposium on VLSI Technology(2007)
摘要
Power gain (f
MAX
) of 350 GHz and cut-off frequency (f
T
) of 280 GHz is demonstrated for 36 nm L
poly
devices in a 45 nm bulk CMOS process. A record f
T
of 350 GHz (intrinsic f
T
425 GHz), without any loss of f
MAX
is seen in 28 nm L
poly
devices. Combination of advanced lithography and liner stress effect can be leveraged to further boost f
T
and f
MAX
by 14% with a relaxed pitch device. Comparison with 90 and 65 nm nodes illustrates the impact of scaling and parasitics.
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关键词
RF performance,bulk CMOS process,cut-off frequency,power gain,lithography,liner stress effect,frequency 350 GHz,size 45 nm
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