Equivalent Circuit Model for InP-based Uni-Traveling-Carrier Photodiodes with Dipole-doped Structure

2014 Asia Communications and Photonics Conference (ACP)(2014)

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摘要
An equivalent circuit model has been proposed to analyze the high performance of InP-based uni-traveling-carrier photodiodes (UTC-PDs) with novel dipole-doped structure. The validity of this model has been confirmed with experimental data.
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关键词
dipole-doped structure,equivalent circuit model,InP-based uni-traveling-carrier photodiodes,InP
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