Effects of x-ray and gamma-ray irradiation on the optical properties of quantum dots immobilized in porous silicon

The effects of X-ray and gamma irradiation on the optical properties of CdTe/CdS quantum dots (QDs) immobilized in a functionalized porous silicon film have been investigated via continuous wave and time-resolved photoluminescence measurements. Carrier lifetimes of the QDs and photoluminescence intensities decrease with increasing exposure dose from 500 krad(SiO2) to 16 Mrad(SiO2).