Characterization Of Algan And Gan Based Hemt With Aln Interfacial Spacer

This paper characterizes a high electron mobility transistor (HEMT) having an undoped AlN spacer layer in the interface of AlGaN and GaN layers. Two-dimensional (2-D) electron gas layer at the interface plays an important role in defining the mobility of charge carriers and hence drain current of HEMT. Introduction of an AlN spacer layer between the AlGaN and GaN layers further causes an improvement in these characteristics. The output characteristics curve (IDS-VDS) and transconductance curves (IDS-VGS) are analyzed by simulating the structure using Silvaco Atlas. The proposed HEMT offers a subthreshold slope of 80 mV/decade and it is 1.53x lower than that of similar structure already reported in the literature.