A Manufacturable High-K Mim Dielectric With Outstanding Reliability And Voltage Linearity For Rf And Mixed-Signal Technologies

Kunal Vaed,Ebenezer E Eshun,R Bolam,Kenneth J Stein,D Coolbaugh,David C Ahlgren,John C Dunn

2004 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS（2004）

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摘要

We demonstrate the simultaneous optimization of 100,000 POH reliability and voltage linearity (< 40 ppm/V) for a high-k MIM dielectric (4.5 fF/ m(2)) that is both Al and Cu BEOL compatible. Also, we discuss the scaling of dielectric films to achieve excellent bias linearity, while attaining a capacitance density of 7.2 fF/ m(2).

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关键词

MIM, capacitors, passive devices, high-k dielectric, reliability, voltage linearity, TDDB, VCC

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