Self-aligned processes for the GaAs gate FET

H. Baratte,D.C. La Tulipe,Christina Marie Knoedler,Thomas N. Jackson,David J. Frank,Paul M. Solomon,Steven L. Wright

international electron devices meeting（1986）

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摘要

We have developed cold gate and refractory gate self-aligned processes for the GaAs-based SISFET. Using either of these approaches, we have demonstrated 0.7 µm gate length devices with near-zero threshold voltage, transconductance of 280mS/mm at 300K and 400mS/mm at 77K and low gate leakage. We have also fabricated 23-stage ring oscillators which yielded delays of 35ps/gate and speed-power products of 10fJ/gate at 300K.

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关键词

ohmic contacts,contact resistance,ring oscillator,threshold voltage,etching,gallium arsenide,annealing

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