Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates.

In this article, the influence of the trench period and depth of pre-structured r-plane sapphire substrates on the metalorganic vapor phase epitaxy (MOVPE) growth of (112¯2) GaN is investigated. We found that a larger trench period is beneficial for a small basal plane stacking fault (BSF) and threading dislocation (TD) density on the wafer surface, because it facilitates a better formation of a coalescence gap, which effectively blocks defects from penetrating to the surface. Further, the amount of BSFs emerging from the −c-wings of the uncoalesced GaN stripes is directly related to the trench period. With the help of in situ deposited marker layers we studied the development of the individual GaN stripes and observed that the trench depth and hence the ratio of the sapphire c-plane area relative to the total surface area heavily influences the coalescence process and defect development. Moreover, it is observed that the parasitic donor concentration increases for samples with smoother wafer surface.