High resolution spin-on electron beam lithography resist with exceptional dry etching resistance

•A high resolution spin-on hybrid resist for EBL is presented.•With optimized EBL conditions 10nm resolution is demonstrated in thin resist layers.•The extremely high etching resistance of this new resist is exploited for the fabrication of high aspect ratio (20) silicon nano-structures.•Direct writing and dry etching scheme is demonstrated thanks to the peculiar characteristics of the presented resist.