Atomic Layer Deposition Hfo2 Film Used As Buffer Layer Of The Pt/(Bi0.95nd0.05) (Fe0.95mn0.05) O-3/Hfo2/Si Capacitors For Fefet Application

Neodymium and manganese-doped BiFeO3 - (Bi0.95Nd0.05)(Fe0.95Mn0.05)O-3(BNFMO) ferroelectric film and HfO2 layer with different thickness were fabricated using metal-organic decomposition and atomic layer deposition (ALD) method, respectively. Metal-ferroelectric-insulator- semiconductor (MFIS) capacitors with 200 nm thick BNFMO and 5 nm thick HfO2 layer on silicon substrate have been prepared and characterized. It is found that there is no distinct interdiffusion and reaction occurring at the interface between BNFMO/HfO2 and HfO2/Si. The capacitance - voltage (C - V) and leakage current properties of Pt/HfO2/Si capacitors with different HfO2 thickness were studied. The MFIS structure showed clockwise C - V hysteresis loops due to the ferroelectric polarization of BNFMO. The maximum memory window is 5V. The leakage current of the Pt/BNFMO/HfO2/Si capacitor was about 2: 1 x 10-6 A/ cm(2) at an applied voltage of 4V.