Statistical Anomalies Of Bitflips In Srams To Discriminate Mcus From Seus

Juan Antonio Clemente,Francisco J. Franco,Francesca Villa,Maud Baylac,Solenne Rey,Hortensia Mecha,Juan A. Agapito,Helmut Puchner,Guillaume Hubert,Raoul Velazco

2015 15TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS)（2015）

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摘要

This paper presentes an approach to discern MCUs from SEUs in SRAM memories. Experiments involving radiation tests with 14-MeV neutrons on two successive generations (130 and 90 nm) of Cypress devices are presented.

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关键词

SRAMs, Single event upsets, multiple cell upsets, neutron tests

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