Optically detecting spin-split bands in semiconductors in magnetic fields

We report on combined theoretical and experimental studies of spin-split bands in semiconductors in magnetic fields. We have studied a wide range of systems including: 1) electron and valence band splitting in dilute magnetically doped semiconductors (DMS) systems like InMnAs, 2) electron and valence band splitting in strained InSb/AlInSb heterostructures and 3) valence band splitting in GaAs. The systems have been studied with a variety of experimental techniques including: i) ultra-high magnetic field cyclotron resonance ii) magneto-absorption and iii) optically pumped NMR (OPNMR). Calculations are based on the 8-band Pidgeon-Brown model generalized to include the effects of the quantum confinement potential as well as pseudomorphic strain at the interfaces and sp-d coupling between magnetic impurities and conduction band electrons and valence band holes. Optical properties are calculated within the golden rule approximation and compared with experiments. Detailed comparison to experiment allows one to accurately determine conduction and valence band parameters including effective masses and g-factors. Results for InMnAs show shifts in the cyclotron resonance peaks with Mn doping. For InSb, we find a sensitive dependence of the elecronic structure on the strain at the pseudomorphic interfaces. For GaAs, we show that OPNMR allows us to spin-resolve the valence bands and that structure in the OPNMR signal is dominated by the weaker light hole to conduction band Landau level transitions.