Sige Hbt Technology With F(Max)/F(T)=350/300 Ghz And Gate Delay Below 3.3 Ps

This work reports on SiGe HBT technology with f(max) and f(T) of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of and f(T) both of which exhibit 300 GHz and above. Associated BVCEO and BVCBO are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f(max) and f(T) values are also discussed.