Aluminum and Electron-Irradiation Induced Deep-Levels In N-Type And P-Type 6H-Sic

Two deep levels, located at E v+ 0.26eV and E c -0.44eV, in Al-implanted n-type samples and one at E v +0.48eV in p-type samples have been observed by the deep level transient spectroscopy. The level of is identified as the shallower aluminum-acceptor. The 1.7 MeV electron-irradiation, used as a probe to distinguish the implantation induced deep-levels, induces at least six electron traps in the n-SiC and one hole-trap in the p-type material. The peak positions of these deep-levels in DLTS spectra are quite different from those induced by Al-implantation. This result suggests that various damages are formed after heavy ion (Al) and light particle (e) irradiation.