A 10b 200ms/S 0.82mw Sar Adc In 40nm Cmos

PROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)(2013)

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摘要
This paper reports a successive-approximation analog-to-digital converter (ADC) which combines the bypass window and direct switching technique to tolerate the incomplete settling error and reduce the control logic delay. A small unit capacitor cell reduces the power consumption and settling time. The 10-bit prototype is fabricated in a 40nm CMOS process. At 200 MS/s and 0.9-V supply, this ADC consumes 0.82 mW and achieves an SNDR of 57.16 dB, resulting in an FOM of 13.9 fJ/Conversion-step.
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关键词
low power electronics,cmos integrated circuits
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